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| savantic semiconductor product specification silicon pnp power transistors 2SA1117 description with to-3 package high power dissipations applications for power switching amplifier and general purpose applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -200 v v ceo collector-emitter voltage open base -200 v v ebo emitter-base voltage open collector -6 v i c collector current -17 a i b base current -5 a p c collector power dissipation t c =25 200 w t j junction temperature 150 t stg storage temperature -65~150 fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1117 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -200 v v (br)ebo emitter-base breakdown voltage i e =-1ma ;i c =0 -6 v v cesat collector-emitter saturation voltage i c =-5a; i b =-0.5a -2.0 v i cbo collector cut-off current v cb =-200v; i e =0 -0.1 ma i ebo emitter cut-off current v eb =-6v; i c =0 -0.1 ma h fe dc current gain i c =-8a ; v ce =-4v 20 f t transition frequency i c =-0.5a ; v ce =-12v 20 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2SA1117 package outline fig.2 outline dimensions (unindicated tolerance: 0.1mm) |
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